The characterization of wafer surfaces and interfaces using high‐frequency phonons
- 1 December 1989
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 14 (12) , 850-854
- https://doi.org/10.1002/sia.740141208
Abstract
We show that the scattering of nanosecond heat pulses can be used to characterize the surface quality of single crystal wafers for device applications. The technique is sensitive because the high‐frequency phonons that make up the heat pulses have wavelengths that are comparable with the typical scale of surface imperfection. The advantages of the technique are that it is non‐destructive, can be applied to both semiconductors and insulators, requires minimal preparation and can be used to observe deep subsurface structure.Keywords
This publication has 10 references indexed in Scilit:
- The use of superconducting bolometers for detecting nanosecond heat pulsesJournal of Physics E: Scientific Instruments, 1989
- Observation of heat pulses scattered from ion bombardment damage at sapphire surfacesJournal of Physics C: Solid State Physics, 1988
- Phonon spectroscopyReports on Progress in Physics, 1988
- Scanning tunneling microscopy study of conductive ceramicsJournal of Vacuum Science & Technology A, 1988
- Argon ion bombardment induced mixing in CoSi: interfacial oxide effectsVacuum, 1986
- Acoustic phonon scattering at sapphire surfaces coated with epitaxial siliconJournal of Physics C: Solid State Physics, 1985
- The use of four-point probe sheet resistance measurements for characterizing low dose ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Optical Probing of Silicon‐Sapphire Interface of Heteroepitaxial SOS FilmsJournal of the Electrochemical Society, 1983
- Cross-sectional electron microscopy of silicon on sapphireApplied Physics Letters, 1975
- INTERFACES AND BOUNDARIESTHE SOLID-SOLID INTERFACE IN THERMAL PHONON RADIATIONLe Journal de Physique Colloques, 1972