High-electron-mobility ZnO epilayers grown by plasma-assisted molecular beam epitaxy
- 20 February 2004
- journal article
- Published by Elsevier
- Vol. 265 (1-2) , 34-40
- https://doi.org/10.1016/j.jcrysgro.2004.01.035
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- The Role of Surface Chemistry in Growth and Material Properties of ZnO Epitaxial Layers Grown on a-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam EpitaxyJapanese Journal of Applied Physics, 2003
- Effects of ZnO/MgO Double Buffer Layers on Structural Quality and Electron Mobility of ZnO Epitaxial Films Grown on c-Plane SapphireJapanese Journal of Applied Physics, 2002
- Morphology evolution of ZnO(000 1̄) surface during plasma-assisted molecular-beam epitaxyApplied Physics Letters, 2002
- Energetics of native defects in ZnOJournal of Applied Physics, 2001
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral OvergrowthJapanese Journal of Applied Physics, 2001
- ZnO:Ga conducting-films grown by DC arc-discharge ionplatingSolar Energy Materials and Solar Cells, 2001
- Effects of substrate offset angles on MBE growth of ZnOJournal of Crystal Growth, 2000
- First-principles study of native point defects in ZnOPhysical Review B, 2000
- Optically pumped lasing of ZnO at room temperatureApplied Physics Letters, 1997
- ZnO Thin Films Prepared by Ion-Assisted Deposition MethodsJapanese Journal of Applied Physics, 1991