Electronic structure of the 'fast donor' in high-purity germanium

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Abstract
A model calculation is proposed for the ground state of the 'fast donor' defect in germanium. The model is based on the assumption of a molecular complex oriented along the different threefold crystal axes. The unusual behaviour of the donor excitation spectrum under uniaxial stress along a (111) direction is explained by this model, if a reorientation at low stress values of the defects oriented parallel to the applied stress is assumed. The value Xi u=19.8+or-1.0 eV is obtained for the shear-deformation potential, in excellent agreement with other determinations.