Activation energy associated with the annealing of buried implanted oxides in silicon
- 15 April 1984
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (8) , 3193-3194
- https://doi.org/10.1063/1.333354
Abstract
The activation energy associated with the annealing of buried implanted oxides in silicon is observed to be 0.15 eV. This value is much lower than those involved in the oxidation of silicon using other processes.This publication has 6 references indexed in Scilit:
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