Equivalent circuit and capacitance of double barrier resonant tunneling diode

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Abstract
By measuring the scattering parameters (S parameters) with on‐wafer probing techniques, the small signal impedances of double barrier resonant tunneling diodes up to 18 GHz have been obtained. The high‐frequency impedance found can be successfully reproduced by a parallel R‐C circuit along with a series R‐L circuit. Our study indicates that the double barrier quantum well structure can be represented by the parallel R‐C circuit alone, while the inductance results from the air‐bridge lines to the probe contacts. The capacitance‐voltage (C‐V) relationship is also obtained. Well‐defined structures corresponding to the tunneling effect are found. An increase in capacitance after tunneling is found in the C‐V curve, and it is attributed to the charge accumulation at the quasibounded state within the quantum well.