Microwave and millimeter-wave QWITT diode oscillators
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 37 (12) , 1933-1941
- https://doi.org/10.1109/22.44105
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- GaAsAlGaAs resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and heightSuperlattices and Microstructures, 1989
- Dependence of apparent barrier height on barrier thickness for perpendicular transport in AlAs/GaAs single-barrier structures grown by molecular beam epitaxyApplied Physics Letters, 1989
- Microwave frequency operation of quantum-well injection transit time (QWITT) diodeElectronics Letters, 1988
- Periodic Monolithic Millimeter-Wave Quantum Well OscillatorPublished by SPIE-Intl Soc Optical Eng ,1988
- Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained-layer superlatticesApplied Physics Letters, 1988
- High-Speed Resonant-Tunneling DiodesPublished by SPIE-Intl Soc Optical Eng ,1988
- Analysis and simulation of the quantum well injection transit time diodeIEEE Transactions on Electron Devices, 1988
- Efficiency and power output of the quantum-well injection transit-time deviceIEEE Electron Device Letters, 1987
- A new transit-time device using quantum-well injectionIEEE Electron Device Letters, 1987
- Power-optimized design of quantum well oscillatorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987