GaAsAlGaAs resonant tunneling diodes: The dependence of the peak-to-valley current ratio on barrier thickness and height
- 31 December 1989
- journal article
- research article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 5 (1) , 109-113
- https://doi.org/10.1016/0749-6036(89)90077-3
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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