A multiple-state memory cell based on the resonant tunneling diode

1 May 1988

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 9 (5) , 200-202
https://doi.org/10.1109/55.689

Abstract

The device consists primarily of several molecular-beam-epitaxy (MBE-) grown GaAs/(AlGa)As resonant tunneling diodes connected in parallel. This device exhibits multiple peaks in the I-V characteristic. When a load resistor is connected, the circuit can be operated in a multiple stable mode. With this concept, implementation of three-state and four-state memory cells are made. In the three-state case the operating points at voltages V/sub 0/=0.27 V, V/sub 1/=0.42 V, and V/sub 2/=0.53 V represent the logic levels 0, 1, and 2. Similarly for the four-state memory cell the logic levels voltages are V/sub 0/=0.35 V, V/sub 1/=0.42 V, V/sub 2/=0.54 V, and V/sub 3/=0.59 V. A suggestion of an integrated device structure using this concept is also presented.

Keywords

This publication has 12 references indexed in Scilit:

Resonant tunneling in double barrier structures with GaAs and (InGa)As quantum wells
Superlattices and Microstructures, 1987
Resonant tunneling device with multiple negative differential resistance: Digital and signal processing applications with reduced circuit complexity
IEEE Transactions on Electron Devices, 1987
A Pseudomorphic In_0.53Ga_0.47As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
Japanese Journal of Applied Physics, 1987
AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio
Applied Physics Letters, 1987
Heterojunction double-barrier diodes for logic applications
Applied Physics Letters, 1987
Excited state resonant tunneling in GaAsAlxGa1−xAs double barrier heterostructures
Superlattices and Microstructures, 1986
Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
IEEE Journal of Quantum Electronics, 1986
Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structures
Applied Physics Letters, 1986
Observation by resonant tunneling of high-energy states in GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As quantum wells
Physical Review B, 1986
Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature
Applied Physics Letters, 1985