The performance of the series III 200kv high current industrial ion implanter

Publisher Website
Google Scholar
Abstract
Two years of operation of the Series III Implanter have revealed the full potential of this machine. The arsenic and phosphorus performance of this machine has greatly exceeded the initial 4 mA design criterion and 8 mA beams of these elements are readily obtainable. The boron beam currents are very dependent upon source history, but 1.2 mA is always available and 3 mA can be obtained from a well conditioned source. The single gap post-acceleration system has proved very successful, a particular advantage over multi-gap tubes being the 100% beam transmission for any post-acceleration voltage and milliampere beams. The processor system consists of a large capacity (54–3″. 27–4″, 18–5″ or 9–6″ silicon wafers) racetrack carousel which gives a mechanical scan free of geometric errors for wafers up to 61/2″ diameter. The wafers are mounted on plates with a clamping technique designed for use with an automatic loading system. The large implantation area (approximately 4,000 cm2) minimizes the temperature rise during implantation. The large beam area (approximately 25 cm2 at the carousel) minimizes the pulse heating effect as the wafers sweep through the beam.

This publication has 3 references indexed in Scilit: