Excitonic photoluminescence in a CuAlSe2 chalcopyrite semiconductor grown by low-pressure metalorganic chemical-vapor deposition
- 15 November 1993
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (10) , 6446-6447
- https://doi.org/10.1063/1.355129
Abstract
Excitonic photoluminescence (PL) in a CuAlSe2 chalcopyrite semiconductor was observed. High‐quality CuAlSe2 epilayers were grown by the low‐pressure metalorganic chemical‐vapor deposition technique. Based on photoreflectance measurements, the PL peak at 2.739 eV was assigned to a free exciton emission. The PL peak at 2.677 eV was tentatively assigned to a bound exciton emission.This publication has 13 references indexed in Scilit:
- 2.51 eV photoluminescence from Zn-doped CuAlSe2 epilayers grown by low-pressure metalorganic chemical vapor depositionApplied Physics Letters, 1993
- LP-MOCVD growth of CuAlSe2 epitaxial layersJournal of Crystal Growth, 1993
- Photoluminescence Studies in CuAlS2 CrystalsJapanese Journal of Applied Physics, 1992
- Electrical and optical properties of CuAlSe2 grown by iodine chemical vapor transportJournal of Applied Physics, 1991
- Preparation and Properties of Single Crystal CuAlSe2 FilmJapanese Journal of Applied Physics, 1991
- Cathodoluminescence and electrical properties of CuAlS2Physica Status Solidi (a), 1989
- Photoluminescence of CuAlxGa1−xSe2 crystals grown by chemical vapor transportJournal of Applied Physics, 1989
- Photoluminescence Properties of CuGaSe2Grown by Iodine Vapour TransportJapanese Journal of Applied Physics, 1978
- Photoluminescences and Excitation Spectra of Some I-III-VI2CompoundsJapanese Journal of Applied Physics, 1976
- Reflection measurements with polarization modulation: A method to investigate bandgaps in birefringent materials like I-III-VI2 chalcopyrite compoundsSolid State Communications, 1973