Early-stage formation of metal-semiconductor interfaces
- 15 May 1988
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 37 (14) , 8516-8518
- https://doi.org/10.1103/physrevb.37.8516
Abstract
We have analyzed the early-stage formation of a GaAs(110)-Ag interface by using a consistent tight-binding method. Our results are in agreement with experimental evidence showing that the Schottky barrier is practically formed with the deposition of a metal monolayer. We conclude that it is not necessary to claim defects in order to explain the barrier formation at low metal coverages.Keywords
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