GaAs/GaInP multiquantum well long-wavelength infrared detector using bound-to-continuum state absorption
- 22 October 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (17) , 1802-1804
- https://doi.org/10.1063/1.104027
Abstract
We demonstrate an 8 μm superlattice infrared detector which utilizes bound-to-continuum state intersubband absorption in lattice-matched GaAs/Ga0.5In0.5P multiquantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy. The band offsets of the GaAs/Ga0.5In0.5P heterosystem are obtained by comparing the theoretical absorption spectrum and the measured responsivity spectrum. The values determined for ΔEc and ΔEv are 221 and 262 meV, respectively.Keywords
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