Broadband 8–12 μm high-sensitivity GaAs quantum well infrared photodetector
- 26 June 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (26) , 2704-2706
- https://doi.org/10.1063/1.101002
Abstract
Broadband GaAs/AlxGa1−xAs quantum well infrared detectors grown by molecular beam epitaxy have been demonstrated which are sensitive over the λ=8–12 μm atmospheric window spectral region. These are the first high-detectivity bound state to extended state quantum well detectors which are peaked at λ=10 μm. The spectral bandwidth (Δν/ν) of these devices is three times larger than our earlier λ=8 μm device. The detectivity D* is background limited at T=50 K with D*=1×1010 cm (Hz)1/2 /W, and a noise equivalent temperature change of NEΔT=0.01 K.Keywords
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