Electroreflectance and band structure of gallium selenide
- 17 September 1971
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 4 (13) , L273-L278
- https://doi.org/10.1088/0022-3719/4/13/008
Abstract
The electroreflectance spectrum of the layer compound gallium selenide shows that the peaks at 3.63 eV and 4.9 eV of the absolute reflectivity are due to threedimensional saddle points. The first transition is resolved in a doublet arising from a spin-orbit split valence state associated with the p orbitals of Se; this contrasts with some theoretical models and favours the view that the pxpy states of selenium are important in forming the upper valence band.Keywords
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