Finite size arrays of proximity effect bridges

Abstract
We have studied devices consisting of 20 x 20 two dimensional arrays of proximity effect junctions of Au/In. The DC resistance at the origin as a function of temperature shows a transition at Tc (In) and another one at T*c, below Tc (In) but above Tc (Au/In). At T*c the devices go into a resistanceless state even though they are composed of SNS junctions. Different shapes of the current-voltage curves characterize each temperature region