Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition
- 19 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (25) , 2537-2539
- https://doi.org/10.1063/1.100201
Abstract
Data are presented showing that GaAs1−y Py grown on GaAs by metalorganic chemical vapor deposition (MOCVD) at relatively low temperature (∼640 °C) exhibits ordering on the column V sublattice. These data, with electron diffraction data and impurity-induced layer disordering data, show that column III site and column V site ordering is possible for the quaternary InGaAsP grown on GaAs by MOCVD at relatively low temperature (∼640 °C). Ordered InGaAsP grown on GaAs shifts in photoluminescence wavelength ∼130 meV higher in energy with disordering by annealing or by impurity-induced intermixing.Keywords
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