Atomic ordering in As and alloy semiconductors
- 15 June 1987
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 58 (24) , 2567-2570
- https://doi.org/10.1103/physrevlett.58.2567
Abstract
GaInAs-InP and GaInAsP-InP multilayers have been investigated by transmission electron microscopy. Electron diffraction studies on 〈1¯10〉 edge-on samples indicate that atomic ordering produces a phase with R3¯m symmetry. This is of different symmetry from the one observed previously in GAlnAs, GaAsSb, and GalnAs. Only one or two variants of the ordered phase are observed in our layered structure.Keywords
This publication has 13 references indexed in Scilit:
- Ordered structures in GaAs0.5Sb0.5 alloys grown by organometallic vapor phase epitaxyApplied Physics Letters, 1986
- Surface layer spinodal decomposition in In1−xGaxAsyP1−y and In1−xGaxAs grown by hydride transport vapor-phase epitaxyJournal of Applied Physics, 1985
- Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layersJournal of Applied Physics, 1985
- Long-Range Order inPhysical Review Letters, 1985
- Vapor levitation epitaxy: A new concept in epitaxial crystal growthJournal of Crystal Growth, 1984
- Spinodal decomposition in InGaAsP epitaxial layersJournal of Crystal Growth, 1984
- Composition modulation in liquid phase epitaxial InxGa1−xAsyP1−y layers lattice matched to InP substratesApplied Physics Letters, 1982
- Unstable Regions in III–V Quaternary Solid Solutions Composition Plane Calculated with Strictly Regular Solution ApproximationJapanese Journal of Applied Physics, 1982
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976
- Calculation of ternary phase diagrams of III–V systemsJournal of Physics and Chemistry of Solids, 1972