Distribution across the channel of defects induced by nitrogen bombardment in silicon
- 1 January 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (1) , 9-11
- https://doi.org/10.1063/1.88574
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Small-angle multiple scattering of ions in the screened Coulomb region: I. Angular distributionsPublished by Elsevier ,2002
- Channeling−effect study of deuteron−induced damage in Si and Ge crystalsApplied Physics Letters, 1975
- Stopping cross sections and backscattering factors for 4He ions in matter Z = 1–92, E(4He) = 400–4000 keVAtomic Data and Nuclear Data Tables, 1974
- Determination of Lattice Disorder Profiles in Crystals by Nuclear BackscatteringJournal of Applied Physics, 1972
- On the spatial distribution of channelled ionsRadiation Effects, 1971
- Plural and multiple scattering of low‐energy heavy particles in solidsPhysica Status Solidi (b), 1971
- Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single CrystalsJournal of Applied Physics, 1970
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Channeling of MeV Projectiles in Tungsten and SiliconPhysical Review B, 1968