ESD protection in a 3.3 V sub-micron silicided CMOS technology
- 31 December 1993
- journal article
- Published by Elsevier in Journal of Electrostatics
- Vol. 31 (2-3) , 111-129
- https://doi.org/10.1016/0304-3886(93)90004-q
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Hot-electron reliability and ESD latent damageIEEE Transactions on Electron Devices, 1988
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985