Hot-electron reliability and ESD latent damage
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (12) , 2189-2193
- https://doi.org/10.1109/16.8793
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Charge pumping in MOS devicesIEEE Transactions on Electron Devices, 1969