Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement
- 1 February 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 20 (1) , 295-305
- https://doi.org/10.1109/jssc.1985.1052306
Abstract
Evidence suggests that MOSFET degradation is due to interface-states generation by electrons having 3.7 eV and higher energies. This critical energy and the observed time dependence is explained with a physical model involving the breaking of the = Si/sub s/H bonds. The device lifetime /spl tau/ is proportional to...Keywords
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