Thermally induced epitaxial recrystallization of NiSi2 and CoSi2
- 14 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (20) , 1992-1994
- https://doi.org/10.1063/1.103229
Abstract
Time‐resolved reflectivity and Rutherford backscattering spectrometry combined with channeling have been used to measure the epitaxial recrystallization kinetics of amorphous NiSi2 and CoSi2 layers. Epitaxial metal silicide layers, fabricated on (111) Si substrates by metal deposition and thermal reaction, were implanted with low‐energy Si ions to form amorphous surface layers. Such layers recrystallized epitaxially from the underlying crystalline metal silicide during thermal annealing at temperatures of 60–176 °C. Post‐anneal disorder consisted of dislocation networks as observed with transmission electron microscopy. Reduced recrystallization rates were apparent in samples implanted with O and Ar ions. Activation energies of 1.09±0.03 and 1.17±0.03 eV were determined for the epitaxial recrystallization of amorphous NiSi2 and CoSi2 layers, respectively.Keywords
This publication has 12 references indexed in Scilit:
- Kinetics of solid phase crystallization in amorphous siliconMaterials Science Reports, 1988
- Growth of single-crystalline CoSi2 on (111) Si in solid phase epitaxy regime by a nonultrahigh vacuum methodApplied Physics Letters, 1987
- Self-aligned silicides or metals for very large scale integrated circuit applicationsJournal of Vacuum Science & Technology B, 1986
- Epitaxial silicidesThin Solid Films, 1982
- Crystallization investigation of NiSi2 thin filmsJournal of Electronic Materials, 1982
- Epitaxial reordering of ion-irradiated NiSi2 layersThin Solid Films, 1982
- Theoretical Considerations on Ion Channeling Effect through Silicide-Silicon InterfaceJapanese Journal of Applied Physics, 1981
- Direct observation of laser-induced solid-phase epitaxial crystallization by time-resolved optical reflectivityApplied Physics Letters, 1980
- A Monte Carlo computer program for the transport of energetic ions in amorphous targetsNuclear Instruments and Methods, 1980
- Channeling studies of radiation damage in metal-silicidesApplied Physics Letters, 1978