On the calculation of specific contact resistivity on
- 1 June 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (6) , 1535-1537
- https://doi.org/10.1109/16.106252
Abstract
In order to design submicrometer Si MOSFETs properly, the specific contact resistivity rho /sub c/ has to be controlled. The rho /sub c/ is known to be a function of both the barrier height and the Si surface doping concentration. An existing theory is used to generate rho /sub c/, emphasizing details in the practical regimes, with a careful choice of proper parameters such as the tunneling effective mass, which is a function of both temperature and doping concentration.Keywords
This publication has 8 references indexed in Scilit:
- Field and thermionic-field emission in Schottky barriersPublished by Elsevier ,2002
- Electron tunneling and contact resistance of metal-silicon contact barriersPublished by Elsevier ,2002
- The impact of intrinsic series resistance on MOSFET scalingIEEE Transactions on Electron Devices, 1987
- Specific contact resistance of metal-semiconductor barriersSolid-State Electronics, 1971
- Chapter 2 The Voltage–Current Characteristic of Metal–Semiconductor ContactsPublished by Elsevier ,1971
- Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodesSolid-State Electronics, 1969
- Effective mass and intrinsic concentration in siliconSolid-State Electronics, 1967
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965