Electrical properties of the anodic oxide-HgZnTe interface
- 1 January 1993
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 8 (1S) , S71-S74
- https://doi.org/10.1088/0268-1242/8/1s/016
Abstract
The electrical properties of the anodic-Hg0.833Zn0.167Te interface were studied by means of capacitance-voltage measurements of metal-insulator-semiconductor capacitors. Hg0.78Cd0.22Te test samples were simultaneously processed for comparison. The fixed insulator charge density was lower in HgZnTe than in HgCdTe, but still large enough to invert the p-type material surface at 0 V. The HgZnTe interface was more stable under thermal treatments than the HgCdTe interface. Hall-effect measurements at variable temperature were used to determine the bulk electrical properties. A two-band model with empirical relations for the energy gap and intrinsic carrier concentration yielded an excellent fit to the experimental data.Keywords
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