Effect of deposition temperature on the electrical properties of p-type Hg0.8Cd0.2TeZnS interface
- 1 April 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 101 (1-4) , 584-588
- https://doi.org/10.1016/0022-0248(90)91041-n
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Interface properties of HgCdTe metal-insulator-semiconductor capacitorsApplied Physics Letters, 1989
- Structural properties of electron beam evaporated zinc sulphide thin filmsVacuum, 1989
- Quantum physics of the surface layer capacitance for narrow-gap HgCdTeSemiconductor Science and Technology, 1988
- Admittance measurements of metal–insulator–semiconductor devices in p‐type HgCdTeJournal of Vacuum Science & Technology A, 1988
- Quasisimultaneous SIMS, AES, XPS, and TDMS study of preferential sputtering, diffusion, and mercury evaporation in CdxHg1−xTeSurface Science, 1981
- n-channel insulated-gate field-effect transistors in Hg1−xCdxTe with x=0.215Applied Physics Letters, 1980
- Properties of ion-implanted junctions in mercury—cadmium—tellurideIEEE Transactions on Electron Devices, 1980
- MIS capacitance and derivative of capacitance, with application to nonparabolic band semiconductorsSolid-State Electronics, 1974