Saturation effect and annealing behaviour of metastable defects induced by keV-electron irradiation in intrinsic a-Si:H
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 633-635
- https://doi.org/10.1016/0022-3093(89)90673-x
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A semiquantitative model for the creation kinetics of metastable defects in a-Si:H by keV-electron irradiationSolid State Communications, 1989
- The creation of metastable defects in a-Si:H films by high dose irradiation with keV-electronsJournal of Non-Crystalline Solids, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985