A semiquantitative model for the creation kinetics of metastable defects in a-Si:H by keV-electron irradiation
- 31 March 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 69 (9) , 895-897
- https://doi.org/10.1016/0038-1098(89)90928-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- The density of states of sputtered a-Si: H studied by the space-charge-limited current technique The influence of deposition parameters, light and keV-electron irradiationPhilosophical Magazine Part B, 1987
- Light-induced metastable defects in hydrogenated amorphous silicon: A systematic studyPhysical Review B, 1985
- Light-induced dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1981
- Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid MaterialsJournal of Applied Physics, 1971