Time-of-flight study of chalcogenide glasses chemically modified by bismuth

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Abstract
The transport process has been studied by the time‐of‐flight technique for the glasses in the systems Ge20BixSe80−x (x=0–13) and Ge20BixSe70−xTe10 (x=0–11), both of which exhibit n‐type conduction in x≥9. The highly dispersive transport was observed for electrons and holes in n‐type glasses, as well as in p‐type glasses. In both systems, the effective drift mobilities of electrons and holes increased with an increase in the Bi content, accompanied by an increase in steady‐state photoconductivity; the trap levels, however, remained almost unchanged for holes and became deeper for electrons. In addition, no large difference was found in the effective drift mobility between electrons and holes in both n‐ and p‐type glasses.