Preparation of n-type semiconducting Ge20Bi10Se70 glass
- 15 May 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (10) , 640-641
- https://doi.org/10.1063/1.90621
Abstract
Chalcogenide bulk glasses exhibiting n‐type conduction were first prepared by quenching the melts of mixtures of Ge, Se, and Bi2Se3 or Bi. The conditions for obtaining homogeneous glasses were examined, and measurements of resistivity and thermoelectric power were carried out on Ge20Bi10Se70 glass, one of the typical n‐type semiconducting glasses in the system Ge‐Bi‐Se. The results indicated that the electrical properties of homogeneous glasses were slightly affected by the difference in starting materials, and the resistivity and thermoelectric power were about 3×107 Ω cm and −1.4 mV/K at room temperature, respectively.Keywords
This publication has 8 references indexed in Scilit:
- Thermoelectric power of amorphous compound semiconductorsJournal of Non-Crystalline Solids, 1977
- Thermoelectric Power of Si–As–Te and Ge–As–Te GlassesJapanese Journal of Applied Physics, 1977
- Influence of Various Dopants on Electrical and Optical Properties of Amorphous Ge0.42 S0.58Journal of the Physics Society Japan, 1976
- Electrical conductivity and thermoelectric power in amorphous As2Se3Tlx semiconductorsJournal of Non-Crystalline Solids, 1973
- Seebeck coefficient in amorphous chalcogenide filmsJournal of Non-Crystalline Solids, 1972
- Effects of impurities on the electrical conductivity of glassy seleniumJournal of Non-Crystalline Solids, 1970
- New Vitreous SemiconductorsJournal of Applied Physics, 1968
- Electrical Properties of Liquid Selenium IJournal of Applied Physics, 1953