Observation of valence-band discontinuity of hydrogenated amorphous silicon/hydrogenated amorphous silicon carbide heterojunction by photocurrent-voltage measurements

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Abstract
Photocurrent‐voltage measurements at different wavelengths exhibit the valence‐band discontinuity of a hydrogenated amorphous silicon/hydrogenated amorphous silicon carbide heterojunction. A band discontinuity of ∼100 meV is deduced based on a tunneling model for a hole barrier. This energy gap is relatively small compared to that for the conduction band, but significantly affects the characteristics of heterojunction p‐i‐n solar cells.