Post-irradiation effects in a rad-hard technology
- 1 June 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 43 (3) , 826-830
- https://doi.org/10.1109/23.510720
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Hardness assurance for low-dose space applications (MOS devices)IEEE Transactions on Nuclear Science, 1991
- CMOS/SOI hardening at 100 Mrad (SiO/sub 2/)IEEE Transactions on Nuclear Science, 1990
- Time-dependent interface trap effects in MOS devicesIEEE Transactions on Nuclear Science, 1988
- A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS TransistorsIEEE Transactions on Nuclear Science, 1987
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Predicting CMOS Inverter Response in Nuclear and Space EnvironmentsIEEE Transactions on Nuclear Science, 1983
- X-Ray Wafer Probe for Total Dose TestingIEEE Transactions on Nuclear Science, 1982
- Activation Energies of Thermal Annealing of Radiation-Induced Damage in N- and P-Channels of CMOS Integrated CircuitsIEEE Transactions on Nuclear Science, 1980
- Characteristics of Thermal Annealing of Radiation Damage in MOSFET'sJournal of Applied Physics, 1968
- Kinetics of Processes Distributed in Activation EnergyPhysical Review B, 1955