Optical properties of quantum wires produced by strain patterning of GaAsAlGaAs quantum wells
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 415-417
- https://doi.org/10.1016/0039-6028(90)90340-e
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructuresApplied Physics Letters, 1988
- Intrinsic stress in diamond-like carbon films and its dependence on deposition parametersThin Solid Films, 1987
- Deformation Potential in Germanium from Optical Absorption Lines for Exciton FormationPhysical Review Letters, 1959