Strain-induced lateral confinement of excitons in GaAs-AlGaAs quantum well microstructures
- 29 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (9) , 782-784
- https://doi.org/10.1063/1.99832
Abstract
We report evidence for lateral confinement of excitons within a continuous two-dimensional GaAs-AlGaAs quantum well. The confinement to ‘‘wires’’ within the well was produced by partially etching a pattern through the upper AlGaAs barrier. We propose a new mechanism, that of patterned strain, for lateral quantum confinement of carriers in semiconductor microstructures, to explain our results.Keywords
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