NiSi formation through a semipermeable membrane of amorphous Cr(Ni)
- 18 February 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (7) , 729-731
- https://doi.org/10.1063/1.104529
Abstract
Following heat treatments of Pt encapsulated Ni80Cr20 thin films on silicon substrates at temperatures ranging from 300 to 500 °C, it has been discovered that Cr atoms segregate at the original NiCr/Si interface to form an amorphous layer, while Ni atoms diffuse into the Si to form Ni silicide. The Cr‐rich amorphous layer acts as a ‘‘semipermeable membrane’’ which selectively passes Ni to form a very uniform NiSi layer.Keywords
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