A TDPAC study of the lattice location of implanted indium in silicon
- 1 January 1984
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 85 (6) , 277-282
- https://doi.org/10.1080/01422448508209703
Abstract
The annealing behaviour of indium implanted silicon (doses 1011−1013 atoms/cm2) was studied by time differential perturbed angular correlation spectroscopy. Besides the substitutional site two types of defect configurations were observed. In the as-implanted condition the substitutional In fraction remains below 20% even at the lowest dose. This result is in accordance with the prediction of the track amorphization model.Keywords
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