Detailed observation of small leak current in flash memories with thin tunnel oxides
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Stress induced leakage current limiting to scale down EEPROM tunnel oxide thicknessPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Mechanism of stress-induced leakage current in MOS capacitorsIEEE Transactions on Electron Devices, 1997
- Limitations on oxide thicknesses in flash EEPROM applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Non-uniform current flow through thin oxide after Fowler-Nordheim current stressPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Stress-induced current in thin silicon dioxide filmsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1992