Thermodynamics of Ga-AsCl3-H2 system and dopant incorporation
- 1 November 1971
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 11 (2) , 113-120
- https://doi.org/10.1016/0022-0248(71)90174-6
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 systemJournal of Crystal Growth, 1971
- Synthesis of Gallium PhosphideJournal of the Electrochemical Society, 1971
- Silver-Manganese Evaporated Ohmic Contacts to p-type Gallium ArsenideJournal of the Electrochemical Society, 1968
- The Transport of Gallium Arsenide in the Vapor Phase by Chemical ReactionJournal of the Electrochemical Society, 1964
- Vapor Pressure of Gallium, Stability of Gallium Suboxide Vapor, and Equilibria of Some Reactions Producing Gallium Suboxide VaporJournal of the Electrochemical Society, 1962
- Activity Coefficients of Electrons and Holes at High ConcentrationsThe Journal of Chemical Physics, 1960
- Theoretical calculation of distribution coefficients of impurities in germanium and silicon, heats of solid solutionJournal of Physics and Chemistry of Solids, 1958
- Chemical Effects Due to the Ionization of Impurities in SemiconductorsThe Journal of Chemical Physics, 1953