Difficulties in Doping SiGe Alloys with Transition Metal Point Defects
- 16 October 1994
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 145 (2) , K5-K9
- https://doi.org/10.1002/pssa.2211450249
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Structure of gold in siliconPhysical Review Letters, 1991
- High-resolution absorption measurements in gold doped Si/Ge alloysApplied Physics A, 1991
- Electronic defect characterization in siliconJournal of Electronic Materials, 1990
- Growth of Si9Ge1 single crystals and their application in high-resolution neutron spectroscopyNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Line spectrum of the interstitial iron donor in siliconApplied Physics Letters, 1988
- An Etch for Delineation of Defects in SiliconJournal of the Electrochemical Society, 1984
- High-resolution studies of sulfur- and selenium-related donor centers in siliconPhysical Review B, 1984
- Physics of ultra-pure germaniumAdvances in Physics, 1981
- Precipitation in High-Purity Silicon Single CrystalsJournal of Applied Physics, 1971