Electronic structure of (1 1 3)-grown GaAs-(GaAl)As single quantum wells under biaxial strain fields
- 29 August 1990
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 75 (8) , 677-682
- https://doi.org/10.1016/0038-1098(90)90223-x
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Valence subband structure and optical gain of GaAs-AlGaAs (111) quantum wellsSemiconductor Science and Technology, 1989
- Exciton binding energy in (Al,Ga)As quantum wells: Effects of crystal orientation and envelope-function symmetryPhysical Review B, 1988
- Determination of valence-band effective-mass anisotropy in GaAs quantum wells by optical spectroscopyPhysical Review B, 1988
- Polarization-dependent gain-current relationship in (111)-oriented GaAs/AlGaAs quantum-well lasersJournal of Applied Physics, 1988
- Piezoelectric effects in strained-layer superlatticesJournal of Applied Physics, 1988
- Near-ideal low threshold behavior in (111) oriented GaAs/AlGaAs quantum well lasersApplied Physics Letters, 1988
- Enhancement in Optical Transition in (111)-Oriented GaAs-AlGaAs Quantum Well StructuresPhysical Review Letters, 1988
- Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B SubstratesJapanese Journal of Applied Physics, 1987
- Optical properties of strained-layer superlattices with growth axis along [111]Physical Review Letters, 1987
- Electronic structure of [001]- and [111]-growth-axis semiconductor superlatticesPhysical Review B, 1987