Trap spectroscopy of a-Si:H diodes using transient current techniques
- 1 July 1980
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 9 (4) , 713-726
- https://doi.org/10.1007/bf02652892
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Defects in plasma-deposited a-Si: HJournal of Non-Crystalline Solids, 1979
- TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACEPublished by Elsevier ,1978
- Schottky Injection Currents in Insulators: The Effect of Space Charge on the Time DependenceIEEE Transactions on Electrical Insulation, 1977
- Electronic properties of substitutionally doped amorphous Si and GePhilosophical Magazine, 1976
- The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniquesSolid-State Electronics, 1976
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- Theory of transient emission current in MOS devices and the direct determination interface trap parametersSolid-State Electronics, 1974