TRANSIENT CAPACITANCE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACE

This publication has 14 references indexed in Scilit:

• Evidence for multiphonon emission from interface states in MOS structures
  Solid State Communications, 1978
• Evolution of surface-states density of Si/wet thermal SiO2 interface during bias-temperature treatment
  Solid-State Electronics, 1977
• Transient capacitance measurements of hole emission from interface states in MOS structures
  Applied Physics Letters, 1977
• IVa-2 Determination of surface state capture cross section from transfer loss measurements in CCD's
  IEEE Transactions on Electron Devices, 1977
• Determination of interface and bulk-trap states of IGFET’s using deep-level transient spectroscopy
  Journal of Applied Physics, 1976
• Fast capacitance transient appartus: Application to ZnO and O centers in GaP p-n junctions
  Journal of Applied Physics, 1974
• On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] Interfaces
  Journal of the Electrochemical Society, 1973
• Interface states in SiSiO2 interfaces
  Solid-State Electronics, 1972
• The Si-SiO₂Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
  Bell System Technical Journal, 1967
• Surface states at steam-grown silicon-silicon dioxide interfaces
  IEEE Transactions on Electron Devices, 1966