Evolution of surface-states density of Si/wet thermal SiO2 interface during bias-temperature treatment
- 30 November 1977
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 20 (11) , 891-896
- https://doi.org/10.1016/0038-1101(77)90010-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Bias-temperature treatment on mos capacitors irradiated with 1 MeV electronsRadiation Effects, 1973
- On the Formation of Surface States during Stress Aging of Thermal Si-SiO[sub 2] InterfacesJournal of the Electrochemical Society, 1973
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971
- Evolution de la distribution des etats d'interface dans des structures mos irradiees aux electrons et soumises a l'effet d'un traitement thermique sous champSolid State Communications, 1970
- Distribution energetique des etats de surface a l'interface
Si SiO effet de differents traitementsSolid State Communications, 1970 - The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Instabilities of MOS StructureJapanese Journal of Applied Physics, 1967
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on SiliconJournal of the Electrochemical Society, 1966