Distribution energetique des etats de surface a l'interface effet de differents traitements
- 1 August 1970
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 8 (15) , 1173-1177
- https://doi.org/10.1016/0038-1098(70)90354-6
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Characteristics of Fast Surface States Associated with SiO[sub 2]-Si and Si[sub 3]N[sub 4]-SiO[sub 2]-Si StructuresJournal of the Electrochemical Society, 1969
- Injection et migration de charges dans l'oxyde d'une structure metal-oxydesemi-conducteurJournal of Physics and Chemistry of Solids, 1968
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966
- Lateral AC current flow model for metal-insulator-semiconductor capacitorsIEEE Transactions on Electron Devices, 1965
- Dispersion and Absorption in Dielectrics I. Alternating Current CharacteristicsThe Journal of Chemical Physics, 1941