Monolithic HEMT LNAS for radar, EW, and COMM
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 105-109
- https://doi.org/10.1109/mcs.1989.37274
Abstract
Three monolithic high electron-mobility transistor (HEMT) low-noise amplifiers (LNAs) were developed that were designed for 7-11-GHz airborne radar, 2-18-GHz electronic warfare, and 20-GHz military satellite communications applications. The first LNA is a two-stage feedback amplifier at X-band, using a 0.5- mu m combined optical stepper and E-beam (electron-beam) lithographic process with a 1.2-dB noise figure at 10 GHz with 15-dB gain, and a typically less than 1.8-dB noise figure from 7-11 GHz. The second is a 2-18-GHz distributed amplifier demonstrating a 3.0-5.2-dB noise figure with approximately 11 GHz. The second is a 2-18-GHz distributed amplifier demonstrating a 3.0-5.2-dB noise figure with approximately 11 dB gain from 2-18 GHz. Finally, a three-stage 20-GHz amplifier using 0.25- mu m direct-write E-beam lithography with a less than 2.0-dB noise figure from 18-23 GHz with 29-dB associated gain is described. All the MMICs were fabricated with selectively doped AlGaAs/GaAs heterostructures grown on undoped GaAs substrates.<>Keywords
This publication has 5 references indexed in Scilit:
- 44 GHz Monolithic Low Noise AmplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- GaAs MMICs for EHF SATCOM ground terminalsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A 12 GHz-band monolithic HEMT low-noise amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Application of InP HEMT devices to millimeter-wave MMICsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A functional GaAs FET noise modelIEEE Transactions on Electron Devices, 1981