5 nm Gate Oxide Grown by Rapid Thermal Processing for Future MOSFETs
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A) , L137-140
- https://doi.org/10.1143/jjap.29.l137
Abstract
Formation of 5-nm-thick SiO2 film has been studied by rapid thermal processing (RTP). The SiO2/Si(100) interface of 5-nm RTP-grown SiO2 film evaluated by high-resolution TEM is quite uniform, at least ordered within one or two atomic layers. The TDDB characteristics have indicated that short-time breakdown failure diminishes with decreasing oxide thickness, drastically below 6 nm in thickness. However, leakage current at low field, which is related to oxide wear-out, is observed in ultrathin RTP-SiO2 film (2 as a gate oxide of MOSFETs and obtained sufficient subthreshold and transconductance characteristics as device performance.Keywords
This publication has 13 references indexed in Scilit:
- Analysis of mechanism for resonant tunneling via localized states in thin SiO2 filmsJournal of Applied Physics, 1988
- High-field-induced degradation in ultra-thin SiO/sub 2/ filmsIEEE Transactions on Electron Devices, 1988
- Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdownApplied Physics Letters, 1987
- Si→transformation: Interfacial structure and mechanismPhysical Review Letters, 1987
- Interfacial and breakdown characteristics of MOS devices with rapidly grown ultrathin SiO2gate insulatorsIEEE Transactions on Electron Devices, 1987
- The Evolution of Si / SiO2 Interface RoughnessJournal of the Electrochemical Society, 1987
- Oxidation of Silicon Using Lamp Light RadiationJournal of the Electrochemical Society, 1986
- Evidence for Resonant Tunneling of Electrons via Sodium Ions in Silicon DioxidePhysical Review Letters, 1985
- A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation TemperaturesJournal of the Electrochemical Society, 1982
- Dependence of Interface State Density on Silicon Thermal Oxidation Process VariablesJournal of the Electrochemical Society, 1979