The electron effective mass in heavily doped GaAs
- 28 June 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (12) , 2289-2293
- https://doi.org/10.1088/0022-3719/12/12/014
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Free carriers's effective mass and relaxation-time analysis by high-pulsed-field Faraday oscillations in III-V compoundsPhysical Review B, 1976
- Infrared cyclotron resonance in InSb, GaAs and Ge in very high magnetic fieldsSolid State Communications, 1976
- The de Haas-van Alphen effect in n-InSb and n-InAsJournal of Physics C: Solid State Physics, 1974
- On the cyclotron effective mass of GaAsJournal of Physics C: Solid State Physics, 1974
- Cyclotron resonance in InSb and GaAs with magnetic fields up to 140 TPhysical Review B, 1974
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Cyclotron resonance and hall experiments with high-purity epitaxial GaAsSolid State Communications, 1969
- Production of Polymer Gel with Least Radiation DoseJournal of the Physics Society Japan, 1966
- Electron Effective Masses of InAs and GaAs as a Function of Temperature and DopingPhysical Review B, 1961
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957