Electrical characterization of 6H–SiC enhancement-mode MOSFETs at high temperatures
- 30 July 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 61-62, 493-496
- https://doi.org/10.1016/s0921-5107(98)00460-7
Abstract
No abstract availableKeywords
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