Ordered-defect model for Si(001)-(2×8)
- 15 October 1986
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 34 (8) , 5654-5657
- https://doi.org/10.1103/physrevb.34.5654
Abstract
The atomic arrangement of the Si(001)-(2×8) surface, which is obtained by annealing at high temperatures, is discussed. Both the analysis of strong features in low-energy electron diffraction patterns and considerations about the surface strain energy favor the ordered missing-dimer defect model. The role of a trace of nickel impurity, which has been reported to stabilize the (2×8) structure, is also discussed.Keywords
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