Chemical trends in lattice location of implanted impurities in silicon
- 1 January 1985
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 88 (3-4) , 217-222
- https://doi.org/10.1080/00337578608207481
Abstract
On the assumption that the lattice location of implanted impurities is determined by the local chemical bond, the impurity sites of various groups of (non-transition) elements of the Periodic Table implanted in pure silicon are discussed in terms of their valency. The theoretical results are in reasonable agreement with available experimental data.Keywords
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