Transmission electron microscopy study of chemically etched porous Si
- 1 February 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (5) , 467-469
- https://doi.org/10.1063/1.108935
Abstract
We have developed a new, minimal damage approach for examination of luminescent porous Si (PS) layers by transmission electron microscopy (TEM). In this approach, chemically etched (CE) PS layers are fabricated after conventional plan-view TEM sample preparation. Our TEM studies show that crystalline, polycrystalline, and amorphous phases exist in the same CE sample. The microstructure is believed to gradually change from crystalline to amorphous during chemical etching in a HF-HNO3-H2O solution. The microcrystallites in the polycrystalline region are estimated to be 15–100 Å, while the pore size is on the order of 400 Å.Keywords
This publication has 20 references indexed in Scilit:
- Photoluminescence, Structure, and Composition of Laterally Anodized Porous SiJournal of the Electrochemical Society, 1992
- Microstructural investigations of light-emitting porous Si layersApplied Physics Letters, 1992
- Photoluminescence and formation mechanism of chemically etched siliconApplied Physics Letters, 1992
- Demonstration of photoluminescence in nonanodized siliconApplied Physics Letters, 1992
- Visible luminescence from silicon wafers subjected to stain etchesApplied Physics Letters, 1992
- Electronic structure of light-emitting porous SiApplied Physics Letters, 1992
- Thermal treatment studies of the photoluminescence intensity of porous siliconApplied Physics Letters, 1991
- Evidence for quantum confinement in the photoluminescence of porous Si and SiGeApplied Physics Letters, 1991
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991
- Electropolishing Silicon in Hydrofluoric Acid SolutionsJournal of the Electrochemical Society, 1958